inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 1 isc n-channel mosfet transistor IRFBC30 features lower input capacitance improved gate charge extended safe operating area rugged gate oxide technology description high current ,high speed switching switch mode power supplies dc-ac converters for welding equipment and uninterruptible power supplies and motor driver. absolute maximum ratings(t a =25 ) thermal characteristics symbol parameter value unit v dss drain-source voltage 600 v v gs gate-source voltage-continuous 20 v i d drain current-continuous 3.6 a i dm drain current-single pluse 14 a p d total dissipation @t c =25 75 w t j max. operating junction temperature 150 t stg storage temperature -65~150 symbol parameter max unit r th j-c thermal resistance, junction to case 1.7 /w r th j-a thermal resistance, junction to ambient 62.5 /w pdf pdffactory pro www.fineprint.cn
inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 2 isc n-channel mosfet transistor IRFBC30 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min max unit v (br)dss drain-source breakdown voltage v gs = 0; i d = 0.25ma 600 v v gs (th ) gate threshold voltage v ds = v gs ; i d = 0.25ma 2 4 v r ds( on ) drain-source on-resistance v gs = 10v; i d =2.2a 2.2 i gss gate-body leakage current v gs = 20v;v ds = 0 100 na i dss zero gate voltage drain current v ds = 600v; v gs = 0 1 a v sd forward on-voltage i s = 3.6a; v gs = 0 1.6 v ciss input capacitance v ds =25v,v gs =0v, f=1.0mhz 475 pf coss output capacitance 72 pf crss reverse transfer capacitance 10 pf pdf pdffactory pro www.fineprint.cn
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